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K4E6E304EBEGCF|SAMSUNG|simage
K4E6E304EBEGCF|SAMSUNG|limage
DRAM 芯片

K4E6E304EB-EGCF

DRAM Chip Mobile LPDDR3 SDRAM 16Gbit 512Mx32 1.2V/1.8V 178-Pin FBGA

Samsung Electronics
数据表 

产品技术规范
  • 欧盟RoHS指令
    Supplier Unconfirmed
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    Active
  • Automotive
    No
  • PPAP
    No
  • DRAM Type
    Mobile LPDDR3 SDRAM
  • Chip Density (bit)
    16G
  • Organization
    512Mx32
  • Number of Internal Banks
    8
  • Number of Words per Bank
    64M
  • Number of Bits/Word (bit)
    32
  • Data Bus Width (bit)
    32
  • Maximum Clock Rate (MHz)
    1866
  • Minimum Operating Temperature (°C)
    -25
  • Maximum Operating Temperature (°C)
    70
  • Supplier Temperature Grade
    Commercial
  • Number of I/O Lines (bit)
    32
  • Mounting
    Surface Mount
  • Package Width
    11
  • Package Length
    11.5
  • PCB changed
    178
  • Standard Package Name
    BGA
  • Supplier Package
    FBGA
  • Pin Count
    178

文档和资源

数据表
设计资源