DRAM 芯片

K4B4G0846E-BYMA000

DRAM Chip DDR3L SDRAM 4Gbit 512Mx8 1.35V/1.5V 78-Pin FBGA

Samsung Electronics

产品技术规范

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Obsolete

• Automotive

  No

• PPAP

  No

• DRAM Type

  DDR3L SDRAM

• Chip Density (bit)

  4G

• Organization

  512Mx8

• Number of Internal Banks

  8

• Number of Words per Bank

  64M

• Number of Bits/Word (bit)

  8

• Data Bus Width (bit)

  8

• Maximum Clock Rate (MHz)

  1866

• Maximum Access Time (ns)

  0.195

• Address Bus Width (bit)

  19

• Minimum Operating Supply Voltage (V)

  1.283|1.425

• Maximum Operating Supply Voltage (V)

  1.45|1.575

• Operating Current (mA)

  64

• Minimum Operating Temperature (°C)

  0

• Maximum Operating Temperature (°C)

  95

• Supplier Temperature Grade

  Commercial

• Number of I/O Lines (bit)

  8

• Mounting

  Surface Mount

• Package Width

  7.5

• Package Length

  11

• PCB changed

  78

• Standard Package Name

  BGA

• Supplier Package

  FBGA

• Pin Count

  78

• Lead Shape

  Ball