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K4B1G1646IBMMA|SAMSUNG|simage
K4B1G1646IBMMA|SAMSUNG|limage
DRAM 芯片

K4B1G1646I-BMMA

DRAM Chip DDR3L SDRAM 1Gbit 64Mx16 1.35V/1.5V 96-Pin FBGA

Samsung Electronics
数据表 

产品技术规范
  • 欧盟RoHS指令
    Compliant
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    Obsolete
  • Automotive
    No
  • PPAP
    No
  • DRAM Type
    DDR3L SDRAM
  • Chip Density (bit)
    1G
  • Organization
    64Mx16
  • Number of Internal Banks
    8
  • Number of Words per Bank
    8M
  • Number of Bits/Word (bit)
    16
  • Data Bus Width (bit)
    16
  • Maximum Clock Rate (MHz)
    1866
  • Maximum Access Time (ns)
    0.195
  • Address Bus Width (bit)
    16
  • Minimum Operating Supply Voltage (V)
    1.283|1.425
  • Maximum Operating Supply Voltage (V)
    1.45|1.575
  • Operating Current (mA)
    134
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    95
  • Supplier Temperature Grade
    Industrial
  • Number of I/O Lines (bit)
    16
  • Mounting
    Surface Mount
  • Package Width
    7.5
  • Package Length
    13.3
  • PCB changed
    96
  • Standard Package Name
    BGA
  • Supplier Package
    FBGA
  • Pin Count
    96
  • Lead Shape
    Ball

文档和资源

数据表
设计资源