DRAM 芯片

K4B1G0846G-BCK0000

1GB G-DIE DDR3 SDRAM

Samsung Electronics

产品技术规范

• 欧盟RoHS指令

  Supplier Unconfirmed

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Obsolete

• 美国海关商品代码

  8542.32.00.24

• Automotive

  No

• PPAP

  No

• Chip Density (bit)

  1G

• Organization

  128Mx8

• Number of Internal Banks

  8

• Number of Words per Bank

  16M

• Number of Bits/Word (bit)

  8

• Data Bus Width (bit)

  8

• Address Bus Width (bit)

  17

• Minimum Operating Temperature (°C)

  0

• Maximum Operating Temperature (°C)

  95

• Number of I/O Lines (bit)

  8