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MOSFETs

IRFB7546PBF

Trans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-220AB Tube

Infineon Technologies AG
数据表 

产品技术规范
  • 欧盟RoHS指令
    Compliant with Exemption
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    NRND
  • 美国海关商品代码
    COMPONENTS
  • SVHC
    Yes
  • SVHC超标
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    3.7
  • Maximum Continuous Drain Current (A)
    75
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    7.3@10V
  • Typical Gate Charge @ Vgs (nC)
    58@10V
  • Typical Gate Charge @ 10V (nC)
    58
  • Typical Input Capacitance @ Vds (pF)
    3000@25V
  • Maximum Power Dissipation (mW)
    99000
  • Typical Fall Time (ns)
    34
  • Typical Rise Time (ns)
    51
  • Typical Turn-Off Delay Time (ns)
    32
  • Typical Turn-On Delay Time (ns)
    11
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tube
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    6@10V|7.5@6V
  • Mounting
    Through Hole
  • Package Height
    9.02(Max)
  • Package Width
    4.83(Max)
  • Package Length
    10.67(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-220AB
  • Pin Count
    3
  • Lead Shape
    Through Hole

文档和资源

数据表
设计资源