产品技术规范
欧盟RoHS指令
Compliant
美国出口管制分类ECCN编码
EAR99
环保无铅
Active
美国海关商品代码
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Seven Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
600
Maximum Gate-Source Voltage (V)
20
Maximum Gate Threshold Voltage (V)
4.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
23
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
5
Maximum Drain-Source Resistance (mOhm)
22@12V
Typical Gate Charge @ Vgs (nC)
150@12V
Typical Gate to Drain Charge (nC)
49
Typical Gate to Source Charge (nC)
31
Typical Reverse Recovery Charge (nC)
9000
Typical Input Capacitance @ Vds (pF)
5639@300V
Minimum Gate Threshold Voltage (V)
3.5
Typical Output Capacitance (pF)
89
Maximum Power Dissipation (mW)
390000
Typical Fall Time (ns)
9
Typical Rise Time (ns)
4
Typical Turn-Off Delay Time (ns)
150
Typical Turn-On Delay Time (ns)
30
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
20@12V
Maximum Pulsed Drain Current @ TC=25°C (A)
375
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
62
Typical Diode Forward Voltage (V)
0.82
Typical Gate Plateau Voltage (V)
5.4
Typical Reverse Recovery Time (ns)
460
Typical Gate Threshold Voltage (V)
4
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Surface Mount
Package Height
2.3
Package Width
10.38
Package Length
9.8
PCB changed
8
Tab
Tab
Standard Package Name
SO
Supplier Package
HSOF
Pin Count
9