GT25Q102Q|TOSHIBA|simage
GT25Q102Q|TOSHIBA|limage
IGBT 칩

GT25Q102(Q)

Trans IGBT Chip N-CH 1200V 25A 200W 3-Pin(3+Tab) TO-3PL

Toshiba
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제품 기술 사양
  • 유럽 연합 RoHS 명령어
    Compliant with Exemption
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    Obsolete
  • Automotive
    No
  • PPAP
    No
  • Channel Type
    N
  • Configuration
    Single
  • Maximum Gate Emitter Voltage (V)
    ±20
  • Maximum Collector-Emitter Voltage (V)
    1200
  • Typical Collector-Emitter Saturation Voltage (V)
    2.1
  • Maximum Continuous DC Collector Current (A)
    25
  • Maximum Gate Emitter Leakage Current (uA)
    0.5
  • Maximum Power Dissipation (mW)
    200
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Through Hole
  • Package Height
    26
  • Package Width
    5
  • Package Length
    20
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-3PL
  • Pin Count
    3
  • Lead Shape
    Through Hole

문서 및 자료

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