STMicroelectronicsSTH310N10F7-2MOSFETs
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.8(Typ) | |
| 180 | |
| 200 | |
| 10 | |
| 2.3@10V | |
| 180@10V | |
| 180 | |
| 12800@25V | |
| 315000 | |
| 40 | |
| 108 | |
| 148 | |
| 62 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 4.8(Max) |
| Package Width | 9.17(Max) |
| Package Length | 10.4(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Supplier Package | H2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Make an effective common source amplifier using this STH310N10F7-2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 315000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with stripfet technology.
| EDA / CAD Models |
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