| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | 8541.49.70.80 |
| Automotive | No |
| PPAP | No |
| Type | Chip |
| Phototransistor Type | Phototransistor |
| Lens Shape Type | Domed |
| Material | Silicon |
| Number of Channels per Chip | 1 |
| Polarity | NPN |
| Half Intensity Angle Degrees (°) | 72 |
| Viewing Orientation | Top View |
| Peak Wavelength (nm) | 800 |
| Maximum Rise Time (ns) | 10000(Typ) |
| Maximum Fall Time (ns) | 10000(Typ) |
| Maximum Light Current (uA) | 2000(Min) |
| Maximum Collector Current (mA) | 30 |
| Maximum Dark Current (nA) | 500 |
| Maximum Emitter-Collector Voltage (V) | 5 |
| Maximum Collector-Emitter Voltage (V) | 32 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
| Maximum Power Dissipation (mW) | 150 |
| Fabrication Technology | NPN Transistor |
| Minimum Operating Temperature (°C) | -25 |
| Maximum Operating Temperature (°C) | 85 |
| Packaging | Bulk |
| Diameter | 3.8 |
| Mounting | Through Hole |
| Package Height | 5.2 |
| PCB changed | 2 |
| Supplier Package | T-1 |
| Pin Count | 2 |
| Lead Shape | Through Hole |
