| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | EA |
| Categoría del producto | Power MOSFET |
| Material | SiC |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 18 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Maximum Continuous Drain Current (A) | 89 |
| Maximum Drain-Source Resistance (mOhm) | 28@15V |
| Typical Gate Charge @ Vgs (nC) | 166@15V |
| Typical Input Capacitance @ Vds (pF) | 5180@800V |
| Maximum Power Dissipation (mW) | 348000 |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 13 |
| Typical Turn-Off Delay Time (ns) | 21 |
| Typical Turn-On Delay Time (ns) | 15 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Mounting | Through Hole |
| Package Height | 20.95 |
| Package Width | 5 |
| Package Length | 15.92 |
| PCB changed | 4 |
| Tab | Tab |
| Supplier Package | TO-247 |
| Pin Count | 4 |