| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Material | Si |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 60 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 26 |
| Maximum Drain-Source Resistance (mOhm) | 11.4@10V |
| Typical Gate Charge @ Vgs (nC) | 17@10V |
| Typical Input Capacitance @ Vds (pF) | 1250@30V |
| Maximum Power Dissipation (mW) | 1600 |
| Typical Fall Time (ns) | 3.8 |
| Typical Rise Time (ns) | 2.7 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Mounting | Surface Mount |
| Package Height | 0.85 mm |
| Package Width | 3.1 mm |
| Package Length | 3.1 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TSON Advance EP |
| Pin Count | 8 |
