| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| 8.6 | |
| 14.5@10V | |
| 121@10V | |
| 121 | |
| 32 | |
| 20 | |
| 400 | |
| 5400 | |
| 90 | |
| 20 | |
| 205 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 11.5@10V|15@4.5V | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) mm |
| Package Width | 5.89 mm |
| Package Length | 4.9 mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | PowerPAK SO EP |
| 8 | |
| Lead Shape | No Lead |
Make an effective common gate amplifier using this SI7461DP-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 1900 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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