| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 11.7 | |
| 7.5@10V | |
| 12.5@4.5V | |
| 3.6 | |
| 6.3 | |
| 19 | |
| 300 | |
| 3800 | |
| 10 | |
| 10 | |
| 45 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 6.2@10V|8.1@4.5V | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) mm |
| Package Width | 3.05 mm |
| Package Length | 3.05 mm |
| PCB changed | 8 |
| Supplier Package | PowerPAK 1212 EP |
| 8 | |
| Lead Shape | No Lead |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SI7114DN-T1-E3 power MOSFET. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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