| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 50 | |
| 18@10V | |
| 110(Max)@10V | |
| 110(Max) | |
| 2400@25V | |
| 190000 | |
| 250 | |
| 250 | |
| 210 | |
| 8.1 | |
| -55 | |
| 175 | |
| Mounting | Through Hole |
| Package Height | 9.01(Max) mm |
| Package Width | 4.7(Max) mm |
| Package Length | 10.41(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Create an effective common drain amplifier using this IRFZ48RPBF power MOSFET from Vishay. Its maximum power dissipation is 190000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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