10-25% 折扣
Infineon Technologies AGIPP023NE7N3GXKSA1MOSFETs
Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| OptiMOS 3 | |
| Enhancement | |
| N | |
| 1 | |
| 75 | |
| ±20 | |
| 3.8 | |
| -55 to 175 | |
| 120 | |
| 2.3@10V | |
| 155@10V | |
| 155 | |
| 10800@37.5V | |
| 2420 | |
| 300000 | |
| 22 | |
| 26 | |
| 70 | |
| 19 | |
| -55 | |
| 175 | |
| Tube | |
| 400 | |
| Mounting | Through Hole |
| Package Height | 9.25 mm |
| Package Width | 4.4 mm |
| Package Length | 10 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 | |
| Lead Shape | Through Hole |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' IPP023NE7N3GXKSA1 power MOSFET can provide a solution. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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