| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 12 | |
| ±8 | |
| 1 | |
| 3.9 | |
| 100 | |
| 1 | |
| 47@4.5V | |
| 6.5@4.5V|11@8V | |
| 900 | |
| 12 | |
| 20 | |
| 30 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.2 |
| Package Width | 0.8 |
| Package Length | 0.8 |
| PCB changed | 4 |
| Standard Package Name | BGA |
| Supplier Package | Micro Foot |
| 4 | |
| Lead Shape | Ball |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SI8806DB-T2-E1 power MOSFET. Its maximum power dissipation is 900 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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