onsemiMJD117T4GDarlington BJT

This PNP MJD117T4G Darlington transistor from ON Semiconductor amplifies your current and yields a much higher current gain than other transistors. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@40mA@4A V. This product's maximum continuous DC collector current is 2 A, while its minimum DC current gain is 500@0.5A@3 V|1000@2A@3V|200@4A@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. Its maximum power dissipation is 1750 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.