Infineon Technologies AGBCR523UE6327HTSA1Digital BJT - Pre-Biased

Thanks to Infineon Technologies' NPN BCR523UE6327HTSA1 digital transistor, you can easily benefit from the characteristics of traditional BJT s while working with digital systems. This product's maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 70@50mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@2.5mA@50mA V. Its maximum power dissipation is 330 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a dual configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.