| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 50 | |
| 50 | |
| 6 | |
| 150 | |
| 1.2 | |
| 1.2@40mA@2A | |
| 0.39@175mA@3.5A|0.4@40mA@2A | |
| 7 | |
| 100 | |
| 200@500mA@2V | |
| 1300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5 mm |
| Package Width | 2.5 mm |
| Package Length | 4.5 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| 4 | |
| Lead Shape | Flat |
If your circuit's specifications require a device that can handle high levels of voltage, ON Semiconductor's PNP 2SA2016-TD-E general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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