NXP Semiconductors2PB709ASL,215GP BJT

Trans GP BJT PNP 45V 0.1A 250mW 3-Pin SOT-23 T/R

The versatility of this PNP 2PB709ASL,215 GP BJT from NXP Semiconductors makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.

A datasheet is only available for this product at this time.

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