Diodes IncorporatedZXTC2063E6TAGP BJT
Trans GP BJT NPN/PNP 40V 3.5A/3A 1700mW 6-Pin SOT-26 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN|PNP | |
| Bipolar Power | |
| Dual | |
| 2 | |
| 130@NPN|45@PNP | |
| 40 | |
| 7 | |
| 1.05@350mA@3.5A@NPN|1@300mA@3A@PNP | |
| 0.06@100mA@1A|0.11@20mA@1A|0.22@40mA@2A|0.195@350mA@3.5A@NPN|0.09@100mA@1A|0.29@20mA@1A|0.26@300mA@3A@PNP | |
| 3.5@NPN|3@PNP | |
| 300@10mA@2V|280@1A@2V|40@3.5A@2V@NPN|200@1A@2V|20@3A@2V@PNP | |
| 1700 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.1 mm |
| Package Width | 1.6 mm |
| Package Length | 3 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-26 |
| 6 | |
| Lead Shape | Gull-wing |
Implement this versatile npn and PNP ZXTC2063E6TA GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1700 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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