G3 1200V SiC-MOSFET TO-247 15mohm
3rd Generation SiC MOSFETs
Toshiba's 3rd generation Silicon Carbide (SiC) MOSFETs introduces a selection of 1200V voltage products. In common with 2nd generations, Toshiba's newest generation of MOSFETs include a built-in SiC Schottky Barrier Diode (SBD) with a low forward voltage (VF) of -1.35V (typ.), placed in parallel with the PN diode in the SiC MOSFETs, to suppress fluctuation in RDS(on) thereby enhancing reliability.
Features
- Low on-resistance per unit area (RDS(ON)A)
- Low drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd)
- Low diode forward voltage: VDSF = -1.35 V (typ.) @VGS = -5 V
Applications
- Switching power supplies (servers, data center, communications equipment, etc.)
- EV charging stations
- Photovoltaic inverters
- Uninterruptible power supplies (UPS)
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| SiC | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1200 | |
| 25 | |
| 175 | |
| 100 | |
| 20@18V | |
| 158@18V | |
| 6000@800V | |
| 431000 | |
| 75 | |
| 80 | |
| -55 | |
| 175 | |
| Mounting | Through Hole |
| Package Height | 20.95 |
| Package Width | 5.02 |
| Package Length | 15.94 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 |
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.