| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 85 | |
| 19@10V | |
| 76@10V | |
| 76 | |
| 4750@25V | |
| 3750 | |
| 170 | |
| 170 | |
| 40 | |
| 22 | |
| -55 | |
| 175 | |
| Mounting | Surface Mount |
| Package Height | 4.83(Max) |
| Package Width | 9.65(Max) |
| Package Length | 10.41(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SUM85N15-19-E3 power MOSFET can provide a solution. Its maximum power dissipation is 3750 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.

