Infineon Technologies AGIPL60R199CPAUMA1MOSFETs
Trans MOSFET N-CH 650V 16.4A 4-Pin VSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| IPL60R199CPAUMA1 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 3.5 | |
| 16.4 | |
| 199@10V | |
| 32@10V | |
| 32 | |
| 1520@100V | |
| 139000 | |
| 5 | |
| 5 | |
| 50 | |
| 10 | |
| -40 | |
| 150 | |
| Tape and Reel | |
| 180@10V | |
| 51 | |
| Mounting | Surface Mount |
| Package Height | 1 |
| Package Width | 8 |
| Package Length | 8 |
| PCB changed | 4 |
| Standard Package Name | SON |
| Supplier Package | VSON EP |
| 4 |
Make an effective common source amplifier using this IPL60R199CPAUMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 139000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -40 °C to 150 °C. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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