Infineon Technologies AGIPD031N06L3GMOSFETs
Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Unconfirmed | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| -55 to 175 | |
| 100 | |
| 3.1@10V | |
| 59@4.5V | |
| 10000@30V | |
| 167000 | |
| 13 | |
| 78 | |
| 64 | |
| 25 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 2.3 mm |
| Package Width | 6.22 mm |
| Package Length | 6.5 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
Increase the current or voltage in your circuit with this IPD031N06L3G power MOSFET from Infineon Technologies. Its maximum power dissipation is 167000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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