Infineon Technologies AGIPB600N25N3GATMA1MOSFETs
Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 250 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 25 | |
| 100 | |
| 1 | |
| 60@10V | |
| 22@10V | |
| 22 | |
| 2 | |
| 8 | |
| 604 | |
| 5 | |
| 1770@100V | |
| 3@100V | |
| 2 | |
| 112 | |
| 136000 | |
| 8 | |
| 10 | |
| 22 | |
| 10 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 51@10V | |
| 100 | |
| 62 | |
| 1 | |
| 4.3 | |
| 127 | |
| 1.2 | |
| 3 | |
| 20 | |
| Mounting | Surface Mount |
| Package Height | 4.57(Max) mm |
| Package Width | 9.45(Max) mm |
| Package Length | 10.31(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
This IPB600N25N3GATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 136000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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