| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 120 | |
| 100 | |
| 6 | |
| 1.2@100mA@1A | |
| 0.4@100mA@1A | |
| 2 | |
| 200@100mA@5V | |
| 500 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5 mm |
| Package Width | 2.5 mm |
| Package Length | 4.5 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| 4 | |
| Lead Shape | Flat |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN 2SC3647T-TD-E GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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