STMicroelectronicsSTGWT20V60DFPuce IGBT
Trans IGBT Chip N-CH 600V 40A 167W 3-Pin(3+Tab) TO-3P Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| EA | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 1.85 | |
| 40 | |
| 0.25 | |
| 167 | |
| -40 | |
| 175 | |
| Industrial | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 18.7 mm |
| Largeur du paquet | 5(Max) mm |
| Longueur du paquet | 15.8(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-3P |
| 3 | |
| Forme de sonde | Through Hole |
This STGWT20V60DF IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 167000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C. It is made in a single configuration.
| EDA / CAD Models |
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