| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 4.5 | |
| 80 | |
| 100 | |
| 1 | |
| 6.5@10V | |
| 150@10V | |
| 150 | |
| 9130@40V | |
| 167000 | |
| 48 | |
| 61 | |
| 162 | |
| 24 | |
| -55 | |
| 175 | |
| Industrial | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.4(Max) |
| Largeur du paquet | 6.2(Max) |
| Longueur du paquet | 6.6(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
This STD110N8F6 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 167000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with stripfet f6 technology.
| EDA / CAD Models |
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