VishaySI7431DP-T1-GE3MOSFET
SI7431DP-T1-GE3 Vishay MOSFETs Transistor P-CH 200V 2.2A 8-Pin PowerPAK SO T/R - Arrow.com
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 200 | |
| ±20 | |
| 2.2 | |
| 174@10V | |
| 88@10V | |
| 88 | |
| 1900 | |
| 66 | |
| 49 | |
| 110 | |
| 23 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) |
| Largeur du paquet | 5.89 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | PowerPAK SO EP |
| 8 | |
| Forme de sonde | No Lead |
Make an effective common gate amplifier using this SI7431DP-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 1900 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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