MOSFET

SCT1000N170

Trans MOSFET N-CH SiC 1.7KV 6A 3-Pin HIP-247 Tube

STMicroelectronics

Spécifications techniques du produit

• 欧盟RoHS指令

  Compliant with Exemption

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8541.29.00.55

• SVHC

  Yes

• SVHC超标

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  SiC

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  1700

• Maximum Gate-Source Voltage (V)

  25

• Maximum Continuous Drain Current (A)

  6

• Maximum Drain-Source Resistance (mOhm)

  1500@20V

• Typical Gate Charge @ Vgs (nC)

  14@20V

• Typical Input Capacitance @ Vds (pF)

  150@1000V

• Maximum Power Dissipation (mW)

  120000

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  200

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  20

• Package Width

  5

• Package Length

  15.6

• PCB changed

  3

• Supplier Package

  HIP-247

• Pin Count

  3