Infineon Technologies AGIPP120N20NFDAKSA1MOSFET
Trans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| 20 | |
| 4 | |
| 84 | |
| 100 | |
| 1 | |
| 12@10V | |
| 65@10V | |
| 65 | |
| 5000@100V | |
| 300000 | |
| 8 | |
| 10 | |
| 24 | |
| 13 | |
| -55 | |
| 175 | |
| Tube | |
| 10.6@10V | |
| Installation | Through Hole |
| Hauteur du paquet | 9.25 mm |
| Largeur du paquet | 4.4 mm |
| Longueur du paquet | 10 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
Amplify electronic signals and switch between them with the help of Infineon Technologies' IPP120N20NFDAKSA1 power MOSFET. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology.
| EDA / CAD Models |
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