Infineon Technologies AGBSS127H6327XTSA2MOSFET
Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±20 | |
| 0.021 | |
| 500000@10V | |
| 0.65@10V | |
| 0.65 | |
| 21@25V | |
| 500 | |
| 115 | |
| 9.7 | |
| 14 | |
| 6.1 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 310000@10V|330000@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
This BSS127H6327XTSA2 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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