Infineon Technologies AGBSC025N03MSGATMA1MOSFET
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2 | |
| 23 | |
| 2.5@10V | |
| 36@4.5V|74@10V | |
| 74 | |
| 5700@15V | |
| 2500 | |
| 11 | |
| 11 | |
| 29 | |
| 22 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 5.15 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
As an alternative to traditional transistors, the BSC025N03MSGATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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