| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 5.5 | |
| 41@4.5V | |
| 9.3@4.5V | |
| 751@10V | |
| 2100 | |
| 29 | |
| 9 | |
| 19 | |
| 13 | |
| -55 | |
| 150 | |
| 34@4.5V|42@2.5V|52@1.8V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.1 |
| Largeur du paquet | 1.6 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSOP |
| 6 |
If you need to either amplify or switch between signals in your design, then Alpha & Omega Semiconductor's AO6409A power MOSFET is for you. Its maximum power dissipation is 2100 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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