| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| NDD03N60Z1G | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 30 | |
| 2.6 | |
| 3600@10V | |
| 12@10V | |
| 12 | |
| 312@25V | |
| 61000 | |
| 10 | |
| 8 | |
| 16 | |
| 9 | |
| -55 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 6.35(Max) mm |
| Package Width | 2.38(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | IPAK |
| 3 | |
| Lead Shape | Through Hole |
Amplify electronic signals and switch between them with the help of ON Semiconductor's NDD03N60Z-1G power MOSFET. Its maximum power dissipation is 61000 mW. This product comes in rail packaging to keep individual parts separated and protected. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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