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MJD31C13|DIODEZTX|simage
MJD31C13|DIODEZTX|limage
GP BJT

MJD31C-13

Trans GP BJT NPN 100V 3A 3900mW 3-Pin(2+Tab) TO-252 T/R

Diodes Incorporated
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    100
  • Maximum Collector-Emitter Voltage (V)
    100
  • Maximum Base-Emitter Voltage (V)
    6
  • Maximum Collector-Emitter Saturation Voltage (V)
    1.2@375mA@3A
  • Maximum DC Collector Current (A)
    3
  • Minimum DC Current Gain
    25@1A@4V|10@3A@4V
  • Maximum Power Dissipation (mW)
    3900
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Supplier Temperature Grade
    Automotive
  • Mounting
    Surface Mount
  • Package Height
    2.29
  • Package Width
    6.1
  • Package Length
    6.58
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-252
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources