| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 230 | |
| 7.5@10V | |
| 358@10V | |
| 358 | |
| 28000@25V | |
| 1670000 | |
| 29 | |
| 38 | |
| 62 | |
| 58 | |
| -55 | |
| 175 | |
| Mounting | Through Hole |
| Package Height | 21.34(Max) mm |
| Package Width | 5.21(Max) mm |
| Package Length | 16.13(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SO |
| Supplier Package | ISOPLUS 247 |
| 3 |
Thanks to Ixys Corporation, both your amplification and switching needs can be taken care of with one component: the IXFX230N20T power MOSFET. Its maximum power dissipation is 1670000 mW. This device utilizes gigamos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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