| Part Status | Active |
| HTS | EA |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 200 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 4.8 |
| Maximum Drain-Source Resistance (mOhm) | 800@10V |
| Typical Gate Charge @ Vgs (nC) | 14(Max)@10V |
| Typical Input Capacitance @ Vds (pF) | 260@25V |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 22 |
| Typical Turn-Off Delay Time (ns) | 19 |
| Typical Turn-On Delay Time (ns) | 7.2 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) |
| Package Width | 6.22(Max) |
| Package Length | 6.73(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Supplier Package | DPAK |
| Pin Count | 3 |
