Infineon Technologies AGIPP075N15N3GXKSA1MOSFETs
Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 100 | |
| 7.5@10V | |
| 70@10V | |
| 70 | |
| 5470@75V | |
| 300000 | |
| 14 | |
| 35 | |
| 46 | |
| 25 | |
| -55 | |
| 175 | |
| Tube | |
| 5.8@10V|6@8V|6.2@10V|6.4@8V | |
| 400 | |
| Mounting | Through Hole |
| Package Height | 9.45(Max) mm |
| Package Width | 4.57(Max) mm |
| Package Length | 10.36(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 |
Create an effective common drain amplifier using this IPP075N15N3GXKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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