Infineon Technologies AGIPL65R1K5C6SATMA1MOSFETs
Trans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| IPL65R1K5C6SATMA1 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 3.5 | |
| 3 | |
| 100 | |
| 1 | |
| 1500@10V | |
| 11@10V | |
| 11 | |
| 225@100V | |
| 26600 | |
| 18.2 | |
| 5.9 | |
| 33 | |
| 7.7 | |
| -40 | |
| 150 | |
| Tape and Reel | |
| 1350@10V | |
| Mounting | Surface Mount |
| Package Width | 6.1(Max) mm |
| Package Length | 5.1(Max) mm |
| PCB changed | 8 |
| Supplier Package | Thin-PAK EP |
| 8 |
As an alternative to traditional transistors, the IPL65R1K5C6SATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 26600 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C. This device is made with coolmos c6 technology.
| EDA / CAD Models |
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