Infineon Technologies AGBCX42E6327HTSA1GP BJT
Trans GP BJT PNP 125V 0.8A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 125 | |
| 125 | |
| 5 | |
| 1.4@30mA@300mA | |
| 0.9@30mA@300mA | |
| 0.8 | |
| 25@100uA@1V|63@100mA@1V|40@200mA@1V | |
| 330 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1(Max) mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
If your circuit's specifications require a device that can handle high levels of voltage, Infineon Technologies' PNP BCX42E6327HTSA1 general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 125 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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