Infineon Technologies AGBCV61CE6327HTSA1GP BJT

Trans GP BJT NPN 30V 0.1A 300mW 4-Pin SOT-143 T/R Automotive AEC-Q101

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BCV61CE6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

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3,000 parts: Ships tomorrow

    Total$0.06Price for 1

    • Ships tomorrow

      Ships from:
      United States of America
      Date Code:
      2213+
      Manufacturer Lead Time:
      0 weeks
      Country Of origin:
      Austria
      • In Stock: 3,000 parts
      • Price: $0.0639

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